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Info for "Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
"Author: K. Matsumoto, Y. Gotoh, TatsuroMaeda, J. A. Dagata and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 1999
Journal: Jpn. J. Appl. Phys.
, Volume 38
, Issue 1B
Pages: 477-479
Abstract: Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fabrication processes and measurement systems such as a pulse-mode AFM nano-oxidation process and a triaxial active feedback measurement system are introduced. The Coulomb oscillation peaks appear with the period of 1.9 V at the drain bias conditions of 0.25 V and 0.3 V. The current modulation rate ranges from 20% to 30%.
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