Go Back to Previous Page
|
Info for "1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
"Author: C. W. Coldren, M. C. Larson, S. G. Spruytte and J. S. Harris
Reference Type: Journal Article Link: Click Here Year Published: 2000
Journal: Electronics Letters
, Volume 36
, Issue 11
(Notes: M3: Article; Copyright 2008 The Thomson Corporation
) Pages: 951-952
Author Address: Stanford Univ, Solid State & Photon Lab, CIS 126X, Via Ortega, Stanford, CA 94305 USA; Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA; Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
|