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Info for "Low threshold current continuous-wave GaInNAs/GaAs VCSELs
"Author: M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris
Reference Type: Conference Proceedings
Year Published: 2000
Conference Name: Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Pages: 9-10
Abstract: Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 μm are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to wavelengths in the 1.3-1.6 μm range allows for dramatically increased transmission bandwidth and distance in conventional single- and multi-mode fiber. GaInNAs is a promising active layer material grown on GaAs that can achieve 1.3 μm emission, and electrically pulsed broad-area GaInNAs VCSELs have been realized. We demonstrate for the first time low-threshold (~1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 μm under continuous-wave room temperature operation
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