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Info for "Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy " Author: P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog Reference Type: Journal Article Link: Click Here Year Published: 2001 Journal: Journal of Applied Physics , Volume 89 , Issue 11 (Notes: M3: Article; Copyright 2008 IEE; The Thomson Corporation ) Pages: 6294-2 Author Address: Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany; Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany; Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
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Publications

Info for "Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy "