Publications

Author: M. C. Larson, M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. A. P. H. E. Petersen, H. E. A. G. H. E. Garrett and J. S. A. H. J. S. Harris
Reference Type: Conference Proceedings
Year Published: 2001

Conference Name: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Pages: II-594-II-595 vol.2
Abstract: We describe low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation. The bottom mirror consists of a 22.5-period n-doped GaAs/AlAs distributed Bragg reflector (DBR) designed for a center wavelength /spl lambda/ near 1.2 /spl mu/m, the top mirror is a 20-period p-doped DBR with a Ti/Au contact electrode, and the GaAs /spl lambda/ cavity contains three 70 /spl Aring/ Ga/sub 0.3/In/sub 0.7/N/sub 0.02/As/sub 0.98/ quantum wells (QWs) separated by 200 /spl Aring/ GaAs barriers. The epilayers were grown by molecular beam epitaxy using solid source arsenic and a rf nitrogen plasma source. After growth, the top mirror was patterned by dry etching, and the three bottom-most AlAs layers were laterally oxidized, which formed square unoxidized apertures as small as 3.6 /spl mu/m on a side. Devices were mounted without heat sinking on a glass slide for optical emission through the substrate.