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Info for "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 mm
"Author: J. X. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 2004
Journal: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, Volume 22
, Issue 3
(Notes: M3: Article; M3: Journal article; Copyright 2008 Elsevier Engineering Information, Inc.; The Thomson Corporation
)
Pages: 1463-1467
Author Address: Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA; Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA; Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
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