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Info for "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 mu m
"Author: H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris and A. Moto
Reference Type: Journal Article
Link: Click Here
Year Published: 2004
Journal: Journal of Applied Physics
, Volume 96
, Issue 11
(Notes: M3: Article; M3: Journal article; 10.1063/1.1807028; Copyright 2008 Elsevier Engineering Information, Inc.; IEE; The Thomson Corporation
)
Pages: 6375-81
Author Address: Stanford Univ, Dept Elect Engn, Solid State & Photon Lab, CIS-X 126X, Via Ortega, Stanford, CA 94305 USA; Stanford Univ, Dept Elect Engn, Solid State & Photon Lab, Stanford, CA 94305 USA; Innovat Core Sumimoto Elect Ind Ltd, Santa Clara, CA 95051 USA
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