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Info for "Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy "

Author: X. Liu, Q. Tang, J. S. Harris and T. I. Kamins
Reference Type: Journal Article
Link: Click Here
Year Published: 2005

Journal: Journal of Crystal Growth , Volume 281 , Issue 2-4 (Notes: M3: Article; Copyright 2008 The Thomson Corporation )
Pages: 334-343
Author Address: Stanford Univ, Ctr Integrated Syst, Solid State & Photon Lab, Stanford, CA 94305 USA; Stanford Univ, Ctr Integrated Syst, Solid State & Photon Lab, Stanford, CA 94305 USA; Hewlett Packard Corp, Palo Alto, CA 94304 USA

     
 

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