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Info for "Mn- and Cr-doped InN: a promising diluted magnetic semiconductor material
"Author: A. Ney, R. Rajaram, R. F. C. Farrow, J. S. Harris and S. S. P. Parkin
Reference Type: Journal Article
Link: Click Here
Year Published: 2005
Journal: 3rd International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors, 21-23 July 2004, Santa Barbara, CA, USA
, Volume 18
, Issue 1
(Notes: M3: Article; M3: Conference Publication; M3: Journal article; 10.1007/s10948-005-2148-6; Copyright 2008 Elsevier Engineering Information, Inc.; IEE; The Thomson Corporation
)
Pages: 41-6
Author Address: IBM Corp, Almaden Res Ctr, Div Res, 650 Harry Rd, San Jose, CA 95120 USA; IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA; Stanford Univ, Solid States & Photon Lab, Stanford, CA 94305 USA
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