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Info for "InGaAs metal-oxide-semiconductor capacitors with HfO{sub 2} gate dielectric grown by atomic-layer deposition
"Author: N. Goel, P. Majhi, C. O. Chui, W. Tsai, D. Choi and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 2006
Journal: Applied Physics Letters
, Volume 89
, Issue 16
(Notes: M3: Article; 10.1063/1.2363959; Copyright 2008 IEE; The Thomson Corporation
)
Pages: 163517-1
Author Address: Intel Corp, Santa Clara, CA 95052 USA; Intel Corp, Santa Clara, CA 95052 USA; Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
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