Publications

Search in: Author Title Conference Journal Keywords All

Go Back to Previous Page

Info for "Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge Source"

Author: P. Ardalan, E. R. Pickett, J. S. Harris, A. F. Marshall, S. F. Bent
Reference Type: Journal Article
Year Published: 2008

Journal: Appl. Phys. Lett., Volume 92, Issue 25
Pages: 252902-1-3

     
 

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008