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Info for "Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators" Author: B. Shin, D. Choi, J. S. Harris, P. C. Mclntyre Reference Type: Journal Article Year Published: 2008 Journal: Appl. Phys. Lett., Volume 93, Issue 5 Pages: 052911-1-3

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
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Publications

Info for "Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators"