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Info for "High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO[sub 3] gate dielectric"

Author: N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris and Y. Nishi
Reference Type: Journal Article
Link: Click Here
Year Published: 2007

Journal: Applied Physics Letters, Volume 91, Issue 9
Pages: 093509-3

     
 

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