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Info for "Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (~ 80 nm) Si[sub 1 - x]Ge[sub x] step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications" Author: M. M. Oye, D. Shahrjerdi, I. Ok, J. B. Hurst, S. D. Lewis, S. Dey, D. Q. Kelly, S. Joshi, T. J. Mattord, X. Yu, M. A. Wistey, J. S. Harris Jr, A. L. Holmes Jr, J. C. Lee and S. K. Banerjee Reference Type: Conference Proceedings Link: Click Here Year Published: 2007 Pages: 1098-1102 Publisher: AVS

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
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Publications

Info for "Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (~ 80 nm) Si[sub 1 - x]Ge[sub x] step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications"