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Info for "Sub-100nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of MBE and Electron Beam Lithography" Author: D. R. Allee, P. R. de la Houssaye, D. G. Schlom, J. S. Harris, Jr., and R. F. W. Pease Reference Type: Presentation Year Published: 1987 Event/Location Name: International Symposium on Electron, Ion and Photon Beams Location/City: Woodland Hills, CA Date: May, 1987 Invited: No

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
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Publications

Info for "Sub-100nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of MBE and Electron Beam Lithography"