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Info for "Accurate measurement of MBE substrate temperature
"Author: W. S. Lee, G. W. Yoffe, D. G. Schlom and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 1991
Journal: Journal of Crystal Growth
, Volume 111
, Issue 1-4
Pages: 131-135
Abstract: The behavior of real substrate temperature for radiatively heated MBE holders is measured using changes in the bandgap and refractive index with temperature. The infra-red spectroscopy techniques utilized are not sensitive to window coating and have no adjustable parameters. Using bandgap changes with temperature, we observed that the change in real substrate temperature is approximately 60% that of the indicated thermocouple change and that variations as large as 15[degree sign]C occurred between "nominally identical" substrate holders. The real substrate temperature also changes by up to 10[degree sign]C during growth and with opening and closing of high temperature doping furnaces.
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