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Info for "Molecular beam epitaxial growth and structural design of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/InP HEMTs" Author: Y. C. Pao and J. S. Harris Reference Type: Journal Article Link: Click Here Year Published: 1991 Journal: Proceedings of the Sixth International Conference on Molecular Beam Epitaxy, Volume 111, Issue 1-4 (Notes: M3: Article; M3: Conference Publication; M3: Journal article; Copyright 2008 Elsevier Engineering Information, Inc.; The Thomson Corporation) Pages: 489-494 Author Address: STANFORD UNIV, DEPT ELECT ENGN, STANFORD, CA 94305

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
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Info for "Molecular beam epitaxial growth and structural design of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/InP HEMTs"