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Info for "Physical Origin of the High Output Conductance in In[0.52]Al[0.48]As/In[0.53]Ga[0.47]As/InP HEMTs
"Author: Y. C. Pao and J. S. H. Jr.
Reference Type: Conference Proceedings Year Published: 1991
Conference Name: Proc. Third International Conference, Indium Phosphide and Related Materials
Conference Location: Cardiff, Wales
Pages: 344-348
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