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Info for "Effect of high current density and doping concentration on the characteristics of GaAs/AlAs vertically integrated resonant tunneling diodes " Author: B. G. Park, E. Wolak and J. S. Harris Reference Type: Journal Article Link: Click Here Year Published: 1991 Journal: Journal of Applied Physics , Volume 70 , Issue 11 (Notes: M3: Article; Copyright 2008 IEE; The Thomson Corporation ) Pages: 7141-8 Author Address: DEPT ELECT ENGN, STANFORD, CA 94305

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
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Info for "Effect of high current density and doping concentration on the characteristics of GaAs/AlAs vertically integrated resonant tunneling diodes "