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Info for "Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes
"Author: J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. A. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 1991
Journal: Applied Physics Letters
, Volume 58
, Issue 14
(Notes: M3: Article; Copyright 2008 IEE; The Thomson Corporation
)
Pages: 1482-4
Author Address: GEORGIA INST TECHNOL, SCH ELECT ENGN, ATLANTA, GA 30332; GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332; INST NATL SCI APPL, LPS, F-31077 TOULOUSE, FRANCE; CNRS, SERV NATL CHAMPS INTENSES, F-38042 GRENOBLE, FRANCE; STANFORD UNIV, DEPT ELECT
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