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Info for "High output conductance of InAlAs/InGaAs/InP MODFET due to weak impact ionization in the InGaAs channel
"Author: G. G. Zhou, G. G. Zhou, A. Fischer-Colbrie, J. Miller, Y. C. A. P. Y. C. Pao, B. A. H. B. Hughes, L. A. S. L. Studebaker and J. S. J. A. H. J. S. Harris, Jr.
Reference Type: Conference Proceedings
Year Published: 1991
Conference Name: Electron Devices Meeting, 1991. Technical Digest., International
Pages: 247-250
Abstract: InAlAs/InGaAs/InP MODFETs with short gatelength suffer from a high output conductance, G0, and low breakdown voltage. In addition, the devices often show a kink effect in the I-V curve. The authors show by numerical calculations that weak impact ionization occurs in the In.53Ga.47 As channel under relatively moderate fields. The high G 0 and the kink are mainly caused by mechanisms associated with weak impact ionization. The calculations also show that the low breakdown voltage of the device is caused by the drain-source breakdown in the InGaAs channel. The occurrence of the impact ionization process in the channel was experimentally verified by detection of photons from the device under moderate drain bias
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