Publications

Search in: Author Title Conference Journal Keywords All

Go Back to Previous Page

Info for "Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors "

Author: W. Liu and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 1992

Journal: IEEE Transactions on Electron Devices , Volume 39 , Issue 12 (Notes: M3: Article; M3: Journal article; Copyright 2008 Elsevier Engineering Information, Inc.; IEE; The Thomson Corporation )
Pages: 2726-32
Author Address: STANFORD UNIV, SOLID STATE LAB, STANFORD, CA 94305

     
 

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008