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Info for "GAMMA-X INTERVALLEY TUNNELING IN A GAAS ALAS RESONANT-TUNNELING DIODE UNDER UNIAXIAL-STRESS
"Author: R. E. Carnahan, K. P. Martin, R. J. Higgins, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 1994
Journal: Semiconductor Science and Technology
, Volume 9
, Issue 5
(Notes: M3: Article; Copyright 2008 The Thomson Corporation
)
Pages: 500-503
Author Address: GEORGIA INST TECHNOL, SCH ELECT ENGN, ATLANTA, GA 30332; GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332; STANFORD UNIV, SOLID STATE LAB, STANFORD, CA 94305
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