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Info for "Structural properties of highly mismatched InGaAs-based devices grown by molecular beam epitaxy on GaAs substrates
"Author: M. S. Goorsky, J. W. Eldredge, S. M. Lord and J. S. Harris
Reference Type: Journal Article Link: Click Here Year Published: 1994
Journal: 13th North American Molecular-Beam Epitaxy Conference, 13-15 Sept. 1993, Stanford, CA, USA
, Volume 12
, Issue 2
(Notes: M3: Article; M3: ARTICLE; M3: Conference Publication; Copyright 2008 IEE; The Thomson Corporation
) Pages: 1034-7
Author Address: UCLA, DEPT MAT SCI & ENGN, LOS ANGELES, CA, 90024 STANFORD UNIV, SOLID STATE ELECTR LAB, STANFORD, CA, 94305
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