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Info for "The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si
"Author: J. Knall, L. T. Romano, D. K. Biegelsen, R. D. Bringans, H. C. Chui, J. S. Harris, D. W. Treat and D. P. Bour
Reference Type: Journal Article
Link: Click Here
Year Published: 1994
Journal: Journal of Applied Physics
, Volume 76
, Issue 5
(Notes: M3: Article; Copyright 2008 IEE; The Thomson Corporation
)
Pages: 2697-702
Author Address: XEROX CORP, PALO ALTO RES CTR, 3333 COYOTE HILL RD, PALO ALTO, CA 94304; STANFORD UNIV, SOLID STATE LAB, STANFORD, CA 94305
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