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Info for "Deep level defects in GaAs on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxy "

Author: Y. Okada, J. S. Harris and W. Gotz
Reference Type: Journal Article
Link: Click Here
Year Published: 1996

Journal: Journal of Applied Physics , Volume 80 , Issue 8 (Notes: M3: Article; Copyright 2008 The Thomson Corporation )
Pages: 4770-4772
Author Address: STANFORD UNIV, SOLID STATE ELECT LAB, STANFORD, CA 94305; XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304

     
 

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