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Info for "Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer
"Author: T. Ueda, T. F. Huang, S. Spruytte, H. Lee, M. Yuri, K. Itoh, T. Baba and J. S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 1998
Journal: Journal of Crystal Growth
, Volume 187
, Issue 3
(Notes: M3: Article; M3: Journal article; Copyright 2008 Elsevier Engineering Information, Inc.; IEE; The Thomson Corporation
)
Pages: 340-6
Author Address: Stanford Univ, Dept Elect Engn, Solid State Photon Lab, CIS-S329, Stanford, CA 94305 USA; Stanford Univ, Dept Elect Engn, Solid State Photon Lab, Stanford, CA 94305 USA; Matsushita Elect Corp, Elect Res Lab, Takatsuki, Osaka 56911, Japan
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