J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications Mitsubishi,," Mitsubishi,, August, 1994. (1994). [more info] J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," Electrotechnical Laboratory, Japan (1994). [more info] J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Electrotechnical Laboratory, Japan (1994). [more info] J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Optoelectronics Technology Lab in Japan, Japan (1994). [more info] J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," Yokogawa Electric, Japan (1994). [more info] J. S. Harris, Jr., "of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," Yokogawa Electric, Japan (1994). [more info] J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Sony in Japan, Japan (1994). [more info] J. S. Harris, Jr., "of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," Sony in Japan, Japan (1994). [more info] D. J. Bone, H. Lee, K. Williams, J. S. Harris, Jr. and R. F. W. Pease, "Characterization of In-Situ Variable-Energy Focused Ion Beam/MBE MQW Structures," Symposium on Compound Semiconductors, San Diego, CA (1994). [more info] D. B. Oberman, H. Lee, W. K. Gštz, J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide," Symposium on Compound Semiconductors, San Diego, CA (1994). [more info]
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