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  • T. J. Pinguet, O. Levi, T. Skauli, L. A. A. E. L. A. Eyres, L. A. S. L. Scaccabarozzi, M. M. A. F. M. M. Fejer, J. S. A. H. J. S. Harris, T. J. A. K. T. J. Kulp, S. A. B. S. Bisson, B. A. G. B. Gerard, L. A. B. L. Becouarn and E. A. L. E. Lallier, "Characterization of 0.5 mm thick films of orientation-patterned GaAs for nonlinear optical applications," (2001). [more info]

  • T. J. Pinguet, L. Scaccabarozzi, O. Levi, T. A. S. T. Skauli, L. A. A. E. L. A. Eyres, M. M. A. F. M. M. Fejer and J. S. A. H. J. S. Harris, "Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 μm," , Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE (2001). [more info]

  • V. Sabnis, H. V. Demir, M. Yairi, D. A. B. A. M. D. A. B. Miller and J. S. J. A. H. J. S. Harris, Jr., "Observation of wavelength-converting optical switching at 2.5 GHz in a surface-normal illuminated waveguide," , Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE (2001). [more info]

  • R. R. Sauers and J. S. Harris, "A computational study of tetrahedrene: Strained alkene or dicarbene?," Journal of Organic Chemistry, 66(24), 7951-7954 (2001). [more info]

  • T. Skauli, K. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, M. M. Fejer, J. S. Harris, V. Gerard, L. Becouarn and E. Lallier, "Second harmonic generation in thick orientation-patterned GaAs," , Proc. Optical Society America Annual Meeting 2001, Long Beach, CA (2001). [more info]

  • S. Spruytte, C. Coldren, J. Harris, D. Pantelidis, H. J. Lee, J. Bravman and M. Kelly, "Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(2), 603-608 (2001). [more info]

  • S. G. Spruytte, C. W. Coldren, J. S. Harris, W. Wampler, P. Krispin, K. Ploog and M. C. Larson, "Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal," Journal of Applied Physics, 89(8), 4401-6 (2001). [more info]

  • S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Petersen and J. S. Harris, "Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy," 11th International Conference on Molecular Beam Epitaxy; Sep 11-15 2000; Bijing, China, 227/228, 506-15 (2001). [more info]

  • S. G. Spruytte, M. A. Wistey, M. C. Larson, C. W. Coldren, H. E. Garrett and J. J. S. Harris, "1.3-mu m optoelectronic devices on GaAs using group III-nitride-arsenides," , Vertical-Cavity Surface-Emitting Lasers V, San Jose, CA, USA (2001). [more info]

  • T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model," Journal of Crystal Growth, 222(1), 29-37 (2001). [more info]

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