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  • J. S. Harris, S. Spruytte, M. Larson, C. Coldren, V. Gambin, M. Wistey and S. Bond, "Low-Voltage Optical Interconnects using GaInNAs," MARCO Workshop, Atlanta, GA (2000). [more info]

  • J. S. Harris, "GaInNAs, a New Material for Long Wavelength Lasers," CNOM Workshop, Stanford, CA (2000). [more info]

  • S.G. Spruytte, C.W. Coldren, M.C. Larson, J.S. Harris, "Nitrogen incorporation in Group III-Nitride-Arsenide Materials grown by elemental source MBE," Eleventh International Conference on Molecular Beam Epitaxy (MBE-XI), Beijing, China (2000). [more info]

  • J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength Lasers," Chinese Academy of Sciences, Beijing, China (2000). [more info]

  • M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen, J. S. Harris, "Room Temperature Continuous-wave Operation of GaInNAs Long Wavelength VCSELs," IEEE International Semiconductor Lasers Conference, Monterey, CA (2000). [more info]

  • S. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, and J. S. Harris, "Molecular beam epitaxy growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," 27th International Symposium on Compound Semiconductors, Monterey, CA (2000). [more info]

  • S.G. Spruytte, M.C. Larson, C.W. Coldren, V.A. Sabnis, J.S. Harris, "MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," 19th annual North American Conference on Molecular Beam Epitaxy, Tempe, AZ (2000). [more info]

  • J. S. Harris, "GaInNAs, a New Material for Long Wavelength Lasers," Applied Physics Optics Seminar, Stanford, CA (2000). [more info]

  • J. S. Harris, "The role of Photonics in Quantum Computation," Advanced Heterojunction Technology Workshop, Kona, HI (2000). [more info]

  • C. Arft, D. R. Yankelevich, A. Knoesen, E. Mao and J. S. Harris, "In-line fiber evanescent field electrooptic modulators," Journal of Nonlinear Optical Physics & Materials, 9(1), 79-94 (2000). [more info]

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