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Info for "Molecular-beam epitaxial growth of III–V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication"

Author: Donghun Choi, Eunji Kim, Paul C. McIntyre, and James S. Harris
Reference Type: Journal Article
Link: Click Here
Year Published: 2008

Journal: Applied Physics Letters, Volume 92
Pages: 203502
Abstract: We describe the fabrication of III–V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates using molecular-beam epitaxy. Migration-enhanced epitaxy and low temperature normal GaAs growth produced a sufficiently smooth surface to deposit gate oxides. A 300 nm thick GaAs buffer layer was grown, followed by a 10 nm growth of In0.2Ga0.8As high mobility channel layer. An 8.5 nm thick Al2O3 layer was deposited ex situ by atomic-layer deposition. Capacitance-voltage (C-V) characteristics show the unpinning of Fermi level. This work suggests this materials combination as a promising candidate for the design of advanced, nonclassical complementary MOS and optoelectronic devices on Si substrates.
Author Address: Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, USA; Department of Material Science and Engineering, Stanford University, Stanford, California 94305-4045, USA

     
 

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