Search in: Author Title Conference Journal Keywords All

Go Back to Previous Page


Info for "High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO[sub 3] gate dielectric"

Author: N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris and Y. Nishi
Reference Type: Journal Article
Link: Click Here
Year Published: 2007

Journal: Applied Physics Letters, Volume 91, Issue 9
Pages: 093509-3

     
 

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008