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  • Y. C. Pao and J. S. Harris, "," IEEE Electron Device Letters, 13(10), 535-537 (1992). [more info]

  • K. L. Vodopyanov, "," Semiconductor Science and Technology, 12, 708 (1997). [more info]

  • A. Kameyama, A. Massengale, C. H. Dai and J. S. Harris, "," IEEE Transactions on Electron Devices, 44(1), 1-10 (1997). [more info]

  • J. S. Harris, "(GaIn)(NAsSb): The challenges for long wavelength communications devices," Compound Semiconductors 2004, Proceedings, 184, 63-72 (2005). [more info]

  • S. M. Lord, J. A. Trezza, M. C. Larson, B. Pezeshki and J. S. Harris, "1.3 mu m electroabsorption reflection modulators on GaAs," Applied Physics Letters, 63(6), 806-8 (1993). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 mu m exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Proceedings of the 7th International Conference on Molecular Beam Epitaxy - MBE-VII; Aug 24-28 1992; Schwaebisch Gmuend, Ger, 127(1), 759-64 (1993). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 [mu]m Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Journal of Crystal Growth, 127(1-4), 759-764 (1993). [more info]

  • J. S. Harris, Jr., "1.3-1.55 um GaInNAsSb lasers," Acta Optica Sinica, 23, 2 (2003). [more info]

  • S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim and J. S. Harris, "1.5 mu m GaInNAs(Sb) lasers grown on GaAs by MBE," Proceedings of the Molecular Beam Epitaxy 2002; Sep 15-20 2002; San Francisco, CA, United States, 251(1), 367-71 (2003). [more info]

  • S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim and J. S. Harris, "1.5 [mu]m GaInNAs(Sb) lasers grown on GaAs by MBE," Journal of Crystal Growth, 251(1-4), 367-371 (2003). [more info]

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