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  • Y. C. Pao, D. Liu, W. S. Lee and J. S. Harris, Jr., "Effect of Hydrogen on Undoped and Lightly Si Doped GaAs Grown by Molecular Beam Epitaxy," WOCSEMMAD 1986, San Francisco, CA (1986). [more info]

  • J. S. Harris, Jr., H. H. Lin and P. M. Pitner, "Emitter-Base Junction Surface Leakage and its Impact for Scaled Heterojunction Bipolar Transistors," WOCSEMMAD 1986, San Francisco, CA (1986). [more info]

  • J. S. Harris, Jr., "GaAs on Si, The Best of Each or Worst of Both?," Santa Clara IEEE Section (1986). [more info]

  • Y. C. Pao, J. S. Harris, C. Nishimoto, R. Norton, S. Bandy, H. Cooke, J. Archer, "Gate Recess Induced Parasitic Effects on AlGaAs/GaAs MODFETs,," HEMT Workshop, Kona, HI (1986). [more info]

  • D. Liu, W. S. Lee and J. S. Harris, Jr., "Hydrogen Background Pressure Effects on the Deep Traps in MBE Grown-N-Type GaAs," Materials Research Society Meeting, Palo Alto, CA (1986). [more info]

  • S. J. Rosner, S. M. Koch, S. Laderman and J. S. Harris, Jr., "Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates," Materials Research Society Meeting, Palo Alto, CA (1986). [more info]

  • K. Yoh and J. S. Harris, "New Materials and Structures for Improved Complementary MODFETs," HEMT Workshop, Kona, HI (1986). [more info]

  • D. Liu, Y. C. Pao, P. Pitner and J. S. Harris, Jr., "Role of In-Bonding and Hydrogen Background on Deep Level Traps in MBE GaAs," WOCSEMMAD 1986, San Francisco, CA (1986). [more info]

  • E. S. Hellman and J. S. Harris, Jr., "Slow Polarons Below the Phonon Emission Threshold in High Magnetic Fields or in One Dimensional Semiconductor Heterostructures,," American Physical Society, Las Vegas, NV (1986). [more info]

  • S. M. Koch, S. J. Rosner, D. Schlom and J. S. Harris, Jr., "The Growth of GaAs on Si by Molecular Beam Epitaxy," Materials Research Society Meeting, Palo Alto, CA (1986). [more info]

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