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  • Y. C. Pao, H. Cooke, J. S. Harris, Jr., "Gate Recess Induced Parasitic Effect in Al/GaAs MODFET," WOCSEMMAD 1987, Hilton Head, SC (1987). [more info]

  • K. Yoh and J. S. Harris, Jr., "Complementary MODFET Circuit using Selective Molecular Beam Epitaxy," WOCSEMMAD 1987, Hilton Head, SC (1987). [more info]

  • Y. C. Pao, J. S. Harris, Jr., L. Parechanian and E. R. Weber, "Material and Device Characterization of (110) GaAs/AlGaAs Grown by MBE," WOCSEMMAD 1987, Hilton Head, SC (1987). [more info]

  • K. Yoh, J. S. Harris, "A p-channel Strained Quantum Well Modulation-doped FET," Japan Society of Applied Physics Meeting, Tokyo, Japan (1987). [more info]

  • S. Y. Chou, J. S. Harris, Jr., R. F. W. Pease, D. Allee, P. de la Houssaye, M. McCord, D. Narum and D. Schlom, "Sub-100nm Fabrication Technology and Devices by Combining Electron Beam Lithography and Molecular Beam Epitaxy," American Physical Society Meeting, New York, NY (1987). [more info]

  • J. S. Harris, Jr., S. M. Koch and S. J. Rosner, "The Nucleation and Growth of GaAs on Si," Materials Research Society Meeting, Anaheim, CA (1987). [more info]

  • S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates," Materials Research Society Meeting, Anaheim, CA (1987). [more info]

  • K. Nauka, G. A. Reid, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Deep Electron Traps in MBE GaAs on Si," Materials Research Society Meeting, Anaheim, CA (1987). [more info]

  • D. R. Allee, P. R. de la Houssaye, D. G. Schlom, J. S. Harris, Jr., and R. F. W. Pease, "Sub-100nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of MBE and Electron Beam Lithography," International Symposium on Electron, Ion and Photon Beams, Woodland Hills, CA (1987). [more info]

  • S. M. Koch, S. J. Rosner, R. Hull, and J. S. Harris, Jr., "The Initial Stages of GaAs/Si Growth by MBE," Electronic Materials Conference, Santa Barbara, CA (1987). [more info]

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