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  • J. S. Harris, "GaAs on Si, The Best of Each or Worst of Both!," Frontiers in Materials Science Seminar Series, State University of New York (1988). [more info]

  • E. Wolak, K. Shepard, S. Y. Chou and J. S. Harris, Jr., "Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom," 4th International Conference on Superlattices, Microstructures and Microdevices, Triest, Italy (1988). [more info]

  • D. Liu, T. Zhang, E. C. Larkins, T. T. Chiang, R. A. LaRue, J. S. Harris, Jr., T. Sigmon and W. E. Spicer, "Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces," 1988 International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA (1988). [more info]

  • E. C. Larkins, D. Liu, Y. C. Pao, M. J. Lin, G. W. Yoffe and J. S. Harris, Jr., "Characterization of AlGaAs and GaAs Material and Interfaces Grown on (110) GaAs by MBE," 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA (1988). [more info]

  • B. Lee, M. H. Kim, S. S. Bose, G. E. Stillman, E. C. Larkins, E. S. Hellman, D. G. Schlom and J. S. Harris, Jr., "Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy," 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA (1988). [more info]

  • R. Khrbrck, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr., "Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells," 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA (1988). [more info]

  • K. L. Lear, K. Yoh and J. S. Harris, Jr., "Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates," 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA (1988). [more info]

  • J. S. Harris, Jr., "MBE Growth of High Temperature Superconductors," 6th International MBE Conference, Sapporo, Japan (1988). [more info]

  • Y. C. Pao, J. Franklin and J. S. Harris, Jr., "Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy," 6th International MBE Conference, Sapporo, Japan (1988). [more info]

  • Y. C. Pao, D. Liu and J. S. Harris, Jr., "Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen," 6th International MBE Conference, Sapporo, Japan (1988). [more info]

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