Search in: Author Title Conference Journal Keywords All

  • S. J. B. Yoo, M. M. Fejer, R. L. Byer and J. S. Harris, "2ND-ORDER SUSCEPTIBILITY IN ASYMMETRIC QUANTUM-WELLS AND ITS CONTROL BY PROTON-BOMBARDMENT," Applied Physics Letters, 58(16), 1724-1726 (1991). [more info]

  • J. H. Kim, I. Bozovic, J. S. Harris, Jr., C. B. Eom, T. H. Geballe, W. Y. Lee and E. S. Hellman, "A Comparative Study of Complex Dielectric Function of Cuprate and Bismate Superconductors," Materials Reseearch Society Meeting, Boston, MA (1991). [more info]

  • K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale and J. S. Harris, "Accumulation-mode GaAlAs/GaAs bipolar transistor," Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 30(12), 3846-9 (1991). [more info]

  • W. S. Lee, G. W. Yoffe, D. G. Schlom and J. S. Harris, "Accurate measurement of MBE substrate temperature," Proceedings of the Sixth International Conference on Molecular Beam Epitaxy; Aug 27-31 1990; La Jolla, CA, USA, 111(1), 131-5 (1991). [more info]

  • W. S. Lee, G. W. Yoffe, D. G. Schlom and J. S. Harris, "Accurate measurement of MBE substrate temperature," Journal of Crystal Growth, 111(1-4), 131-135 (1991). [more info]

  • P. Pezeshki, S. M. Lord, T. B. Boykin, B. L. Shoop and J. S. Harris, "AlGaAs/AlAs QW modulator for 6328 AA operation," Electronics Letters, 27(21), 1971-3 (1991). [more info]

  • J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, "Ballistic electron contributions in vertically integrated resonant tunneling diodes," Superlattices and Microstructures, 10(2), 175-8 (1991). [more info]

  • W. Liu, D. Costa and J. J. Harris, "Comparison of the effects of surface passivation and base quasi-electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates," Applied Physics Letters, 59(6), 691-693 (1991). [more info]

  • W. Liu and J. S. Harris, "Dependence of base crowding effect on base doping and thickness for Npn AlGaAs/GaAs HBTs," Electronics Letters, 27(22), 2048-50 (1991). [more info]

  • D. Costa, W. U. Liu and J. S. Harris, "Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit," IEEE Transactions on Electron Devices, 38(9), 2018-24 (1991). [more info]


1 to 10 of 56 Next 10 >>


Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008