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  • B. Pezeshki, S. M. Lord, T. Boykin and J. S. Harris, Jr., "Visible Wavelength Electro-Absorption Modulators in AlGaAs/AlAs Quantum Wells," Optoelectronic Materials Center Review, Palo Alto, CA (1992). [more info]

  • W. Fu, G. R. Olbright, R. Binder, A. Paul, S. W. Koch, W. C. Banyai, J. F. Klem, R. P. Bryan and J. S. Harris, Jr., "Ultrafast Optical Gain Nonlinearities in GaAs/AlGaAs Type II Quantum Wells," Optoelectronic Materials Center Review, Palo Alto, CA (1992). [more info]

  • J. H. Kim, I. Bozovic, J. S. Harris, Jr., C. B. Eom, T. H. Geballe, W. Y. Lee, E. S. Hellman, and J. T. Cheung, "A Comparative Optical Study of Oxide Metals and Superconductors," American Physical Society Meeting, Indianapolis, IN (1992). [more info]

  • D. Oberman and J. S. Harris, "Frequency Doubling in Asymmetric Quantum Wells," Workshop on Wide Bandgap Nitrides, St. Louis, MO (1992). [more info]

  • S. M. Lord, G. Roos, B. Pezeshki and J. S. Harris, Jr., "Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells," Materials Research Society Meeting, San Francisco, CA (1992). [more info]

  • B. Pezeshki and J. S. Harris, Jr., "Quantum Well Surface-Normal Phase Modulator for Beam Steering," Optical Society of America CLEO/QELS, Anaheim, CA (1992). [more info]

  • S. Fu, J. F. Klem, G. R. Olbright and J. S. Harris, Jr., "Ultrafast Optical-Gain Dynamics in GaAs/AlAs Type-II Quantum Wells," Optical Society of America CLEO/QELS, Anaheim, CA (1992). [more info]

  • B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "GaAs/AlAs Quantum Wells for Electro-Absorption Modulators," Device Research Conference, MIT Cambridge, MA (1992). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, Jr., "1.3 Ám Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer," Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmund, Germany (1992). [more info]

  • S. L. Lord, B. Pezeshki, and J. S. Harris, Jr., "Multiple Quantum Well Electroabsorption Modulator Near 1.3 Ám in InGaAs/GaAs," OSA Annual Meeting, Albuquerque, NM (1992). [more info]

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