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  • Y. C. Pao and J. S. Harris, "," IEEE Electron Device Letters, 13(10), 535-537 (1992). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, Jr., "1.3 Ám Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer," Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmund, Germany (1992). [more info]

  • J. H. Kim, I. Bozovic, J. S. Harris, Jr., C. B. Eom, T. H. Geballe, W. Y. Lee, E. S. Hellman, and J. T. Cheung, "A Comparative Optical Study of Oxide Metals and Superconductors," American Physical Society Meeting, Indianapolis, IN (1992). [more info]

  • W. Liu and S. D. Kim, "A high-gain AlGaAs/GaAs heterojunction bipolar transistor grown on silicon substrate," Japanese journal of applied physics. Supplement, 31(9A), 2656 (1992). [more info]

  • W. Liu, D. Costa and J. S. Harris, "A simplified model for the distributed base contact impedance in heterojunction bipolar transistors," Solid-State Electronics, 35(4), 547-52 (1992). [more info]

  • K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale and J. S. Harris, "ACCUMULATION MODE GAALAS/GAAS BIPOLAR-TRANSISTOR WITH 2-DIMENSIONAL HOLE GAS BASE," Institute of Physics Conference Series(120), 299-304 (1992). [more info]

  • W. Liu, C. Dai and J. S. Harris, "An advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Application," Japanese Journal of Applied Physics, 31(L452-4) (1992). [more info]

  • T. B. Boykin, B. Pezeshki and J. S. Harris, "Anti-resonances in the Transmission of a Simple Two-State Model," Physical Review B, 46(19), 12769-12772 (1992). [more info]

  • W. Liu, C. Dai and J. S. Harris, "Contact Impedance in Heterojunction Biopolar Transistors," Solid State Electronics, 35, 547-552 (1992). [more info]

  • W. Liu and J. S. Harris, "Current dependence of base-collector capacitance of bipolar transistors," Solid-State Electronics, 35(8), 1051-7 (1992). [more info]

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