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  • S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, Jr., R. Fernandez and A. Harwit,, "“Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics,”," Mat. Res. Soc. Symp. Proc., 281, pp. 221-225 (1993.). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 [mu]m Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Journal of Crystal Growth, 127(1-4), 759-764 (1993). [more info]

  • H. C. Chui, S. M. Lord, E. Martinet, M. M. Fejer and J. S. Harris, "Intersubband transitions in high indium content InGaAs/AlGaAs quantum wells," Applied Physics Letters, 63(3), 364-6 (1993). [more info]

  • H. Ito and J. S. Harris, "Lattice-mismatched InGaAs double heterojunction bipolar transistors grown on GaAs substrates," Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 32(11), 4923-7 (1993). [more info]

  • D. X. Liu, B. Pezeshki, S. M. Lord and J. S. Harris, "PHASE CHARACTERISTICS OF REFLECTION ELECTROABSORPTION MODULATORS," Applied Physics Letters, 62(18), 2158-2160 (1993). [more info]

  • W. Liu and J. S. Harris, "CUTOFF FREQUENCY AND DC CURRENT GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS," International Journal of Electronics, 74(3), 401-406 (1993). [more info]

  • W. Liu and J. S. Harris, "Critical passivation ledge thickness in AlGaAs/GaAs heterojunction bipolar transistors," Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena), 11(1), 6-9 (1993). [more info]

  • R. Lodenkamper, M. L. Bortz, M. M. Fejer, K. Bacher and J. S. Harris, "SURFACE-EMITTING 2ND-HARMONIC GENERATION IN A SEMICONDUCTOR VERTICAL RESONATOR," Optics Letters, 18(21), 1798-1800 (1993). [more info]

  • S. M. Lord, B. Pezeshki and J. S. Harris, "ELECTROABSORPTION MODULATORS OPERATING AT 1.3-MU ON GAAS SUBSTRATES," Optical and Quantum Electronics, 25(12), S953-S964 (1993). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 mu m exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Proceedings of the 7th International Conference on Molecular Beam Epitaxy - MBE-VII; Aug 24-28 1992; Schwaebisch Gmuend, Ger, 127(1), 759-64 (1993). [more info]

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