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  • S. M. Lord, J. A. Trezza, M. C. Larson, B. Pezeshki and J. S. Harris, "1.3 mu m electroabsorption reflection modulators on GaAs," Applied Physics Letters, 63(6), 806-8 (1993). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 mu m exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Proceedings of the 7th International Conference on Molecular Beam Epitaxy - MBE-VII; Aug 24-28 1992; Schwaebisch Gmuend, Ger, 127(1), 759-64 (1993). [more info]

  • S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 [mu]m Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Journal of Crystal Growth, 127(1-4), 759-764 (1993). [more info]

  • David J. Miller and J. S. Harris, Jr., "50 nm GaAs/AlAs Wire Structures Grown on Corrugated GaAs," 13th NAMBE Conference, Stanford, CA (1993). [more info]

  • G. N. Nasserbakht, J. W. Adkisson, B. A. Wooley, J. S. Harris and T. I. Kamins, "A monolithic GaAs-on-Si receiver front end for optical interconnect systems," IEEE Journal of Solid-State Circuits, 28(6), 622-30 (1993). [more info]

  • E. L. Martinet, B. Vartanian, G. L. Woods, H. C. Chui, J. S. Harris, Jr., M. M. Fejer, B. A. Richman and C. A. Rella, "Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7Ám Regime," NATO Advanced Research Workshop on Intersubband Transition Physics and Devices, Whistler, B. C. (1993). [more info]

  • J. A. Trezza and J. S. Harris, Jr., "Coupled Quantum Wells for Optical Modulation," NATO Conference on Confined Electrons and Photons, Palermo, Italy (1993). [more info]

  • W. Liu and J. S. Harris, "Critical passivation ledge thickness in AlGaAs/GaAs heterojunction bipolar transistors," Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena), 11(1), 6-9 (1993). [more info]

  • W. Liu and J. S. Harris, "CUTOFF FREQUENCY AND DC CURRENT GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS," International Journal of Electronics, 74(3), 401-406 (1993). [more info]

  • S. M. Lord, B. Pezeshki and J. S. Harris, "ELECTROABSORPTION MODULATORS OPERATING AT 1.3-MU ON GAAS SUBSTRATES," Optical and Quantum Electronics, 25(12), S953-S964 (1993). [more info]

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