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  • D. J. Miller and J. S. Harris, "50 nm GaAs/AlAs wire structures grown on corrugated GaAs," 13th North American Molecular-Beam Epitaxy Conference, 13-15 Sept. 1993, Stanford, CA, USA, 12(2), 1286-9 (1994). [more info]

  • J. A. Trezza and J. S. Harris, "Creation and optimization of vertical cavity phase flip modulators," Journal of Applied Physics, 75(10), 4878-4884 (1994). [more info]

  • G. S. Solomon, D. Kirillov, H. C. Chui and J. S. Harris, "DETERMINATION OF ALAS MOLE FRACTION IN ALXGA1-XAS USING RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION," Journal of Vacuum Science & Technology B, 12(2), 1078-1081 (1994). [more info]

  • G. S. Solomon, D. Kirillov, H. C. Chui and J. S. Harris, "Determination of AlAs mole fraction in Al{sub x}Ga{sub 1-x}As using Raman spectroscopy and X-ray diffraction," 13th North American Molecular-Beam Epitaxy Conference, 13-15 Sept. 1993, Stanford, CA, USA, 12(2), 1078-81 (1994). [more info]

  • H. C. Chui, E. L. Martinet, G. L. Woods, M. M. Fejer, J. S. Harris, C. A. Rella, B. I. Richman and H. A. Schwettman, "DOUBLY RESONANT 2ND-HARMONIC GENERATION OF 2.0 MU-M LIGHT IN COUPLED INGAAS ALAS QUANTUM-WELLS," Applied Physics Letters, 64(25), 3365-3367 (1994). [more info]

  • R. E. Carnahan, K. P. Martin, R. J. Higgins, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, "GAMMA-X INTERVALLEY TUNNELING IN A GAAS ALAS RESONANT-TUNNELING DIODE UNDER UNIAXIAL-STRESS," Semiconductor Science and Technology, 9(5), 500-503 (1994). [more info]

  • S. S. Thony, K. E. Youden, J. S. Harris and L. Hesselink, "Growth of epitaxial strontium barium niobate thin films by pulsed laser deposition," Applied Physics Letters, 65(16), 2018-2020 (1994). [more info]

  • H. C. Chui and J. S. Harris, "Growth studies on In{sub 0.5}Ga{sub 0.5}As/AlGaAs quantum wells grown on GaAs with a linearly graded InGaAs buffer," 13th North American Molecular-Beam Epitaxy Conference, 13-15 Sept. 1993, Stanford, CA, USA, 12(2), 1019-22 (1994). [more info]

  • H. C. Chui and J. S. Harris, "GROWTH-STUDIES ON IN0.5GA0.5AS/ALGAAS QUANTUM-WELLS GROWN ON GAAS WITH A LINEARLY GRADED INGAAS BUFFER," Journal of Vacuum Science & Technology B, 12(2), 1019-1022 (1994). [more info]

  • H. Ito and J. S. Harris, "Influence of dislocations on the threshold current density of AlGaAs/GaAs/InGaAs strained quantum-well lasers," Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 33(12), 6516-17 (1994). [more info]

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