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  • D. Chung, F. L. Merat, F. M. Discenzo and J. S. Harris, "Neural net based torque sensor using birefringent materials," Sensors and Actuators, A: Physical, 70(3), 243-249 (1998). [more info]

  • S. M. Cronenwett, S. M. Maurer, S. R. Patel, C. M. Marcus, C. I. Duruoz and J. S. Harris, "Mesoscopic Coulomb blockade in one-channel quantum dots," Physical Review Letters, 81(26), 5904-5907 (1998). [more info]

  • T. F. Huang and J. S. Harris, "Growth of epitaxial AlxGa1-xN films by pulsed laser deposition," Applied Physics Letters, 72(10), 1158-1160 (1998). [more info]

  • T. F. Huang, T. Ueda, S. Spruytte and J. S. Harris, "Growth and effects of single-crystalline ZnO buffer layer on GaN epitaxy," Compound Semiconductors 1997, 156, 11-14 (1998). [more info]

  • A. G. Huibers, S. R. Patel, C. M. Marcus, P. W. Brouwer, C. I. Duruoz and J. S. Harris, "Distributions of the conductance and its parametric derivatives in quantum dots," Physical Review Letters, 81(9), 1917-20 (1998). [more info]

  • C. Y. Hung, J. S. Harris, A. F. Marshall and R. A. Kiehl, "Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers," Applied Physics Letters, 73(3), 330-2 (1998). [more info]

  • C. Y. Hung, J. S. Harris, A. F. Marshall and R. A. Kiehl, "Arsenic precipitation in GaAs for single-electron tunneling applications," Compound Semiconductors 1997, 156, 135-138 (1998). [more info]

  • S. A. Komarov, G. S. Solomon and J. S. Harris, "Increased surface ordering of InAs island arrays using a multi-dot column subsurface structure," Compound Semiconductors 1997, 156, 535-538 (1998). [more info]

  • H. Lee and J. Harris, "Iron nitride mask and reactive ion etching of GaN films," Journal of Electronic Materials, 27(4), 185-189 (1998). [more info]

  • M. D. Levenson, B. A. Paldus, T. G. Spence, C. C. Harb, J. S. Harris and R. N. Zare, "Optical heterodyne detection in cavity ring-down spectroscopy," Chemical Physics Letters, 290(4), 335-40 (1998). [more info]

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