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  • C. W. Coldren, M. C. Larson, S. G. Spruytte and J. S. Harris, "1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions," Electronics Letters, 36(11), 951-952 (2000). [more info]

  • L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. A. E. C. B. Ebert, J. S. A. H. J. S. Harris, M. M. A. F. M. M. Fejer, B. A. G. B. Gerard, K. A. B. K. Becouarn and E. A. L. E. Lallier, "All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion," , Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE (2000). [more info]

  • T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of unstable two-phase region in wurtzite group III nitride ternary alloy using modified valence force field model," Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(9), 5057-5062 (2000). [more info]

  • Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, "Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process," Journal of Applied Physics, 88(2), 1136-40 (2000). [more info]

  • S. G. Spruytte, C. W. Coldren, A. F. Marshall, J. S. Harris, "Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys," MRS Spring 2000 Meeting, San Francisco, CA (2000). [more info]

  • S. G. Spruytte, C. W. Coldren, A. F. Marshall and J. S. Harris, "Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys,"," , Proc. MRS Spring 2000 Meeting, San Francisco, CA (2000). [more info]

  • M. B. Yairi, H. V. Demir, C. W. Coldren, J. S. A. H. J. S. Harris and D. A. D. A. M. D. A. D. Miller, "Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period," , Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest (2000). [more info]

  • M. B. Yairi, H. V. Demir, C. W. Coldren, J. S. Harris, D. A. B. Miller, "Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period," Conf. Nonlinear Optics: Materials, Fundamentals, and Applications, Kauai-Lihue, HI (2000). [more info]

  • P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements," Journal of Applied Physics, 88(7), 4153-8 (2000). [more info]

  • T. J. Pinguet, L. A. Eyres, C. B. Ebert, O. A. L. O. Levi, M. M. A. F. M. M. Fejer and J. S. A. H. J. S. Harris, "Epitaxial orientation-patterning of AlGaAs films for nonlinear optical devices," , Compound Semiconductors, 2000 IEEE International Symposium on (2000). [more info]

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