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  • C. W. Coldren, M. C. Larson, S. G. Spruytte and J. S. Harris, "1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions," Electronics Letters, 36(11), 951-952 (2000). [more info]

  • T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of unstable two-phase region in wurtzite group III nitride ternary alloy using modified valence force field model," Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(9), 5057-5062 (2000). [more info]

  • Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, "Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process," Journal of Applied Physics, 88(2), 1136-40 (2000). [more info]

  • P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements," Journal of Applied Physics, 88(7), 4153-8 (2000). [more info]

  • Y. Gotoh, K. Matsumoto, V. Bubanja, F. Vazquez, T. Maeda and J. S. Harris, "Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process," Solid State Devices and Materials. 1999 International Conference, 21-24 Sept. 1999, Tokyo, Japan, 39(4), 2334-7 (2000). [more info]

  • C. W. Coldren, S. G. Spruytte, J. S. Harris and M. C. Larson, "Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy," Journal of Vacuum Science & Technology B, 18(3), 1480-1483 (2000). [more info]

  • C. Arft, D. R. Yankelevich, A. Knoesen, E. Mao and J. S. Harris, "In-line fiber evanescent field electrooptic modulators," Journal of Nonlinear Optical Physics & Materials, 9(1), 79-94 (2000). [more info]

  • M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris, "Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers," IEEE Photonics Technology Letters, 12(12), 1598-600 (2000). [more info]

  • S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, "MBE growth of nitride-arsenide materials for long wavelength opto-electronics," Mrs Internet Journal of Nitride Semiconductor Research, 5, W8.4 (2000). [more info]

  • E. Mao, D. R. Yankelevich, C. C. Lin, O. Solgaard, A. Knoesen and J. S. Harris, "Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler," Electronics Letters, 36(16), 1378-9 (2000). [more info]


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