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  • W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim, J. S. Harris Jr., " Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers," IEEE Lasers and Electro-Optics Society (LEOS),, San Diego, CA (2001). [more info]

  • S.G. Spruytte, M. A. Wistey, M.C. Larson, C.W. Coldren, H. Garrett, J.S. Harris, "1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides," Photonics West 2001, San Jose, CA (2001). [more info]

  • S. G. Spruytte, M. A. Wistey, M. C. Larson, C. W. Coldren, H. E. Garrett and J. J. S. Harris, "1.3-mu m optoelectronic devices on GaAs using group III-nitride-arsenides," , Vertical-Cavity Surface-Emitting Lasers V, San Jose, CA, USA (2001). [more info]

  • R. R. Sauers and J. S. Harris, "A computational study of tetrahedrene: Strained alkene or dicarbene?," Journal of Organic Chemistry, 66(24), 7951-7954 (2001). [more info]

  • J. S. Harris, Jr., "A View from Silicon Valley: Lessons Learned from the Rise and Fall of the Telecomm Bubble," Entrepreneur Management Program,Kochi University of Technology, Kochi, Japan (2001). [more info]

  • P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy," Journal of Applied Physics, 90(5), 2405-10 (2001). [more info]

  • L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard and E. Lallier, "All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion," Applied Physics Letters, 79(7), 904-6 (2001). [more info]

  • T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model," Journal of Crystal Growth, 222(1), 29-37 (2001). [more info]

  • T. J. Pinguet, O. Levi, T. Skauli, L. A. A. E. L. A. Eyres, L. A. S. L. Scaccabarozzi, M. M. A. F. M. M. Fejer, J. S. A. H. J. S. Harris, T. J. A. K. T. J. Kulp, S. A. B. S. Bisson, B. A. G. B. Gerard, L. A. B. L. Becouarn and E. A. L. E. Lallier, "Characterization of 0.5 mm thick films of orientation-patterned GaAs for nonlinear optical applications," (2001). [more info]

  • T. Pinguet, T. Skauli, O. Levi, K. Vodopyanov, L.A. Eyres, L. Scaccabarozzi, M.M. Fejer, J.S. Harris, T.J. Kulp, S. Bisson, B. Gerard, L. Becouarn, and E. Lallier, "Characterization of 0.5 mm Thick films of orientation-patterned GaAs for nonlinear optical applications," Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD (2001). [more info]


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