Search in: Author Title Conference Journal Keywords All

  • J. Misiewicz, R. Kudrawiec, M. Gladysiewicz, J. S. Harris, "Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues," Dilute III-V Nitride Semiconductors and Materials Systems, 105, 163-179 (2008). [more info]

  • Jun Pan, Yijie Huo, Kazuhiko Yamanaka, Sunil Sandhu, Luigi Scaccabarozzi, Rolf Timp, Michelle L. Povinelli, Shanhui Fan, MM Fejer, James S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Appl. Phys. Lett., 92, 103114 (2008). [more info]

  • Donghun Choi, Eunji Kim, Paul C. McIntyre, and James S. Harris, "Molecular-beam epitaxial growth of III–V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication," Applied Physics Letters, 92, 203502 (2008). [more info]

  • Zhilong Rao, Sonny Vo, and James S. Harris, "A review of progress on nano-aperture VCSEL," Chinese Optics Letters, 6(10), 748-754 (2008). [more info]

  • J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y. H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, D. A. B. Miller, "C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1V swing," Electron. Lett., 44(1), 49-50 (2008). [more info]

  • J. Pan, Y. Huo, K. Yamanaka, S. Sandhu, L. Scaccabarozzi, R. Timp, M. L. Povinelli, S. Fan, M. M. Fejer, J. S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Virtual J. Nanoscale Sci. & Techn. (2008). [more info]

  • J. E. Schaar, K. L. Vodopyanov, P. S. Kuo, M. M. Fejer, X. Yu, A. Lin, J. S. Harris, D. Bliss, C. Lynch, V. G. Kozlov, "Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide Source," IEEE J. Sel. Topics Quantum Electron., 14(2), 354-362 (2008). [more info]

  • P. Ardalan, E. R. Pickett, J. S. Harris, A. F. Marshall, S. F. Bent, "Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge Source," Appl. Phys. Lett., 92(25), 252902-1-3 (2008). [more info]

  • B. Shin, D. Choi, J. S. Harris, P. C. Mclntyre, "Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators," Appl. Phys. Lett., 93(5), 052911-1-3 (2008). [more info]

  • D. Choi, Y. Ge, J. Cagnon, S. Stemmer and J.S. Harris, "Low surface roughness and threading dislocation Ge growth on Si (001) substrate," J. Crystal Growth., 310, 4273-4279 (2008). [more info]


1 to 10 of 14 Next 10 >>


Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008