Search in: Author Title Conference Journal Keywords All

  • Zhilong Rao, Sonny Vo, and James S. Harris, "A review of progress on nano-aperture VCSEL," Chinese Optics Letters, 6(10), 748-754 (2008). [more info]

  • Jun Pan, Yijie Huo, Kazuhiko Yamanaka, Sunil Sandhu, Luigi Scaccabarozzi, Rolf Timp, Michelle L. Povinelli, Shanhui Fan, MM Fejer, James S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Appl. Phys. Lett., 92, 103114 (2008). [more info]

  • J. Pan, Y. Huo, K. Yamanaka, S. Sandhu, L. Scaccabarozzi, R. Timp, M. L. Povinelli, S. Fan, M. M. Fejer, J. S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Virtual J. Nanoscale Sci. & Techn. (2008). [more info]

  • A. Khalili, X.H. Lim, H. Bae, J.S. Harris, "Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks," IEEE J. Quantum Electron., 44(11), 1042-1054 (2008). [more info]

  • J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y. H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, D. A. B. Miller, "C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1V swing," Electron. Lett., 44(1), 49-50 (2008). [more info]

  • J. Misiewicz, R. Kudrawiec, M. Gladysiewicz, J. S. Harris, "Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues," Dilute III-V Nitride Semiconductors and Materials Systems, 105, 163-179 (2008). [more info]

  • P. Ardalan, E. R. Pickett, J. S. Harris, A. F. Marshall, S. F. Bent, "Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge Source," Appl. Phys. Lett., 92(25), 252902-1-3 (2008). [more info]

  • C. Lynch, D.F. Bliss, T. Zens, A. Lin, J.S. Harris, P.S. Kuo, M.M. Fejer, "Growth of mm-thick orientation-patterned GaAs for IR and THZ generation," J. Crystal Growth., 310(24), 5241-5247 (2008). [more info]

  • D. Choi, Y. Ge, J. Cagnon, S. Stemmer and J.S. Harris, "Low surface roughness and threading dislocation Ge growth on Si (001) substrate," J. Crystal Growth., 310, 4273-4279 (2008). [more info]

  • Donghun Choi, Eunji Kim, Paul C. McIntyre, and James S. Harris, "Molecular-beam epitaxial growth of III–V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication," Applied Physics Letters, 92, 203502 (2008). [more info]


1 to 10 of 14 Next 10 >>


Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008