Search in: Author Title Conference Journal Keywords All

  • R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, Jr., "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 µm: Broadening of the fundamental transition," Appl. Phys. Lett., 94(3), 031903-1-3 (2009). [more info]

  • D. Choi, J. Cagnon, E. Kim, S. Stemmer, P.C. McIntyre and J.S. Harris, "High quality III-V materials growth on Si (100) substrate via Ge buffer," J. Crystal Growth., 311, 1962-71 (2009). [more info]

  • Larkhoon Leem, James S. Harris, "Magnetic coupled spin-torque devices for nonvolatile logic applications," J. Appl. Phys., 105(7), 07D102-5 (2009). [more info]

  • D. Englund, B. Ellis, E. Edwards, T. Sarmiento, J. S. Harris, D. A. B. Miller, and J. Vuckovic, "Electrically controlled modulation in a photonic crystal nanocavity," Opt. Express, 17, 15409-15419 (2009). [more info]

  • T. Sarmiento, H. P. Bae, T. D. O'Sullivan, J. S. Harris, Jr., "GaAs-based 1.53 μ m GaInNAsSb vertical cavity surface emitting lasers," Electron. Lett., 45(19), 978-79 (2009). [more info]

  • A. M. Mintairov, K. Sun, J. L. Merz, H. Yuen, S. Bank, M. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semiconductor Sci. Techn., 24(7), 075013-1-6 (2009). [more info]

  • G. S. Kanner, M. L. Marable, N. B. Singh, A. Berghmans, D. Kahler, B. Wagner, A. Lin, M. M. Fejer, J. S. Harris, K. L Schepler, "Optical probes of orientation-patterned ZnSe quasi-phase-matched devices," Optical Engineering, 48(11), 114201-1-6 (2009). [more info]

  • R. Chen, J. X. Fu, D. A. B. Miller, J. S. Harris, "Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination," J. Lightwave Techn., 27(23), 5451-5460 (2009). [more info]

  • J. W. Ferguson, P. M. Smowton, P. Blood, H. Bae, T. Sarmineto, J. S. Harris, Jr.,, "Nonradiative recombination in 1.56 µm GaInNAsSb/GaNAs quantum-well lasers," Appl. Phys. Lett., 95(23), 231104-1-3 (2009). [more info]

  • J. W. Ferguson, P. M. Smowton, P. Blood, H. P. Bae, T. Sarmiento, and J. S. Harris, "Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers," Appl. Phys. Lett., 95, 231104 (2009). [more info]

Top

1 to 10 of 10

     
 

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008