Search in: Author Title Conference Journal Keywords All

  • Yijie Huo, Hai Lin, Robert Chen, Maria Makarova, Yiwen Rong, Mingyang Li, Theodore I. Kamins, Jelena Vuckovic, James S. Harris, "Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy," Applied Physics Letters, 98, 011111 (2011). [more info]

  • Hai Lin, Yijie Huo, Yiwen Rong, Robert Chen, Theodore I. Kamins, James S. Harris, "X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy," Journal of Crystal Growth, 323(1), 17-20 (2011). [more info]

  • Hai Lin, Robert Chen, Yijie Huo, Theodore I. Kamins, and James S. Harris, "Raman study of strained Ge1−xSnx alloys," Applied Physics Letters, 98, 261917 (2011). [more info]

  • Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vuckovic, Theodore I. Kamins, Byung-Gook Park, James S. Harris, "Fabrication and Analysis of Epitaxially Grown Ge Sn Microdisk Resonator With 20-nm Free-Spectral Range," IEEE Photonics Technology Letters, 23(20), 1535-1537 (2011). [more info]

  • Robert Chen, Hai Lin, Yijie Huo, Charles Hitzman, Theodore I. Kamins, and James S. Harris, "Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy," Applied Physics Letters, 99, 181125 (2011). [more info]

  • Suyog Gupta, Robert Chen, Blanka Magyari-Kope, Hai Lin, Bin Yang, Aneesh Nainan, Yoshio Nishi, James S. Harris, Krishna C. Saraswat, "GeSn technology: Extending the Ge electronics roadmap," IEEE Electron Devices Meeting (IEDM), 16.6.1 - 16.6.4 (2011). [more info]

  • Robert Chen, Yijie Huo, Hai Lin, Charles J. Hitzman, Theodore I. Kamins, James S. Harris, "Direct-Bandgap Photoluminescence of MBE-grown Ge1-xSnx Alloys," Electronic Materials Conference 2011, Santa Barbara, CA (2011). [more info]

  • Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation," Applied Physics Letters, 99, 243505 (2011). [more info]

  • Seongjae Cho, Jae Sung Lee, Kyung Rok Kim, Byung-Gook Park, James S. Harris, Jr., and In Man Kang, "Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors," IEEE Transactions on Electron Devices, 58(12), 4164-4171 (2011). [more info]

  • Seongjae Cho, Min-Chul Sun, Garam Kim, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology," Journal of Semiconductor Technology and Science, 11(3), 182-189 (2011). [more info]

Top

1 to 10 of 22 Next 10 >>

     
 

Paul G. Allen Center for Integrated Systems, CISX-328, 420 Via Palou, Stanford University, Stanford, CA 94305-4075
Office phone: (650)723-0983 / Fax: (650)723-4659
Website Developed by: Stanford Internet Solutions ©2008